Grazing incidence synchrotron X-ray topography as a tool for denuded zone studies of silicon wafers

Article type: Research Article

Authors: Rantamäki, R. | Tuomi, T. | McNally, P.J. | Curley, J. | Danilewsky, A.

Affiliations: Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland. | Microelectronics Research Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland. | D-79108 Freiburg, Germany.

Note: [] Corresponding author: Tel.: +358 9 4513126; Fax: +358 9 4513128; E-mail: reko.rantamaki@hut.fi.

Abstract: Reflection topographs of annealed Czochralski-grown silicon wafers are made with synchrotron white beam radiation at grazing angles of 0.2 degree to 3 degree. Information on the uniformity of the denuded zone is obtained from a number of grazing incidence topographs, which according to calculations turn out to be almost completely monochromatic having a negligible harmonic content. The calculated penetration depth ranges from 1 to 100 µm depending on the grazing angle and reflection used. The grazing incidence topographs are compared with section topographs of the same samples.

Journal: Journal of X-Ray Science and Technology, vol. 8, no. 3, pp. 159-169, 1998