Affiliations: [a] Department of Electronics and Communication Engineering, M.M.M. University of Technology, Gorakhpur (UP) India | [b] Department of Electrical Engineering, Indian Institute of Technology Jammu, J&K, India
| [c] Department of Information Technology, Indira Gandhi Delhi Technical University for Women, Delhi, India
Correspondence:
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Corresponding author: Brijesh Kumar, Department of Information Technology, Indira Gandhi Delhi Technical University for Women, Delhi-110006 India. E-mail: brijeshkr@igdtuw.ac.in.
Abstract: This research paper discusses the performance enhancement techniques of multi-layered OLED structures. OLED’s electrical behaviour is evaluated using an analytical model using benchmarked industry-standard Atlas 2-D numerical device simulator. It highlights the extraction of emission and charge transport phenomena and charges injection role. Multilayer OLED device has been investigated by extracting the key performance parameters, including the current density and luminescent power as a function of anode voltage. There is an improvement of 15% in the current density. Furthermore, this work has proceeded with internal analysis and using a mathematical model, where the electric field, total current density, electron and hole concentration, and internal device parameters have been extracted to understand the performance of OLED devices better. Additionally, the internal physics and behaviour of the device have been studied in terms of Langevin recombination. Internal analysis is performed by making cutlines in a vertical fashion so that device physics and the process occurring in the internal part can be clearly understood. The OLED device behaviour analysis is performed using the industry standard state of art device simulation tool.
Keywords: Organic light-emitting diode (OLED), Hole block layer (HBL), Current Density (CD), Luminescent power, Electron block layer (EBL)
