Silicon Drift Detectors with On-Chip Electronics for X-Ray Spectroscopy

Article type: Research Article

Authors: Fiorini, C. | Longoni, A. | Hartmann, R. | Lechner, P. | Strüder, L.

Affiliations: Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy | MPI Halbleiterlabor, Paul-Gerhardt-Allee 42, D-81245 Munich, Germany | KETEK GmbH, Am Isarbach 30, D-85764 Oberschleißheim, Germany

Abstract: The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

DOI: 10.3233/XST-1997-7204

Journal: Journal of X-Ray Science and Technology, vol. 7, no. 2, pp. 117-129, 1997