Affiliations: College of Materials and Metallurgy, Northeastern
University, Shenyang 110006, China | PoHang University of Science and Technology, PoHang,
Korea
Abstract: Silicon(111) and Silicon(100) were employed for fabrication of
TiO_2 films by metal organic chemical vapor deposition
(MOCVD). Titanium (IV) isopropoxide
(Ti[O(C_3H_7)_4]) was used as a
precursor. The as-deposited TiO_2 films were characterized
with FE-SEM, XRD and AFM. The photocatalytic properties were investigated by
decomposition of aqueous Orange II. And UV-VIS photospectrometer was used for
checking the absorption characteristics and photocatalytic degradation
activity. The crystalline and structural properties of TiO_2
film had crucial influences on the photodegradation efficiency. For MOCVD
in-situ deposited films on Si substrates, the photoactivities varied following
a shape of "M": at lower (350°C), middle (500°C) and higher
(800°C) temperature of deposition, relative lower photodegradation
activities were observed. At 400°C and 700°C of deposition, relative
higher efficiencies of degradation were obtained, because one predominant
crystallite orientation could be obtained as deposition at the temperature of
two levels, especially a single anatase crystalline TiO_2
film could be obtained at 700°C.
