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Issue title: Silicon Clusters
Guest editors: G. Maroulisx and A. Zdetsisy
Article type: Research Article
Authors: Zdetsis, Aristides D.
Affiliations: Department of Physics, University of Patras, GR-26500 Patras, Greece. E-mail: zdetsis@upatras.gr | [x] Department of Chemistry, University of Patras, Greece | [y] Department of Physics, University of Patras, Greece
Abstract: The structural, electronic, dynamical and spectral properties of Si6 and its ions (Si61−, Si62−, and Si61+) have been examined using a variety of high level ab initio techniques, including quadratic configuration interaction, coupled cluster, and density functional theory (DFT) with the hybrid B3LYP functional. Various high quality correlation-consistent basis sets, ranging from 2Z up to 5Z quality, were employed for the DFT calculations. It is shown that not only the ground state structure, but also the structure of the excited states, as well as the structure of the anions and cations of Si6 are controversial. Each one of the three competing structures for the ground state, with Cs/C2v, D4h, and C2v symmetry, has been considered by different investigators as the lowest energy structure either of the neutral cluster, or of its anion or cation (or both). In a spirit of “structural democracy” it is demonstrated that the Cs/C2v, D4h, and 2v structures can be safely assigned as the ground states of the neutral, anion, and cation clusters respectively. The present results, which support the structural plasticity (fluxionality) of Si6, are in excellent agreement with experiment, including Raman and IR spectra, ionization energies, electron affinities as well as vibrationally resolved photoelectron spectra. The paradigm of Si6 could be very helpful for other silicon clusters as well.
DOI: 10.3233/JCM-2007-73-407
Journal: Journal of Computational Methods in Sciences and Engineering, vol. 7, no. 3-4, pp. 257-272, 2007
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