Affiliations: [a] Department of Electrical and Information Engineering, Polytechnic University of Bari, Bari, Italy | [b] Department of Electrical and Information Engineering, Polytechnic University of Bari, Bari, Italy | [c] Department of Engineering, University of Messina, Messina, Italy | [d] Department of Electrical and Information Engineering, Polytechnic University of Bari, Bari, Italy
Correspondence:
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Corresponding author: Francesco Cutugno, Department of Electrical and Information Engineering, Polytechnic University of Bari, via E. Orabona 4, 70125 Bari, Italy. E-mail: francesco.cutugno@poliba.it
Abstract: Spin-torque diode have shown great potentials and performance in many applicative fields, from microwave detectors to energy harvesters. In this work, we use micromagnetic simulations to study, at room temperature, a state-of-the-art non-resonant low-frequency-tail spin-torque diode in terms of dc output voltage as a function of the amplitude of an in-plane external field applied along different directions. We find that there exists a threshold value of the injected ac current that promotes a linear behavior of the output voltage of field down to the pT range, and we suggest exploiting such a behavior for the design of a magnetic field sensor.
Keywords: Magnetic tunnel junction, spin-torque diode, magnetic field sensor
