Affiliations: [a] Collaborative Innovation Center on Forecast and Evaluation of Meteorological Disasters, School of Atmospheric Physics, Nanjing University of Information Science and Technology, Nanjing, Jiangsu, China
Correspondence:
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Corresponding author: Xiangchao Li, Collaborative Innovation Center on Forecast and Evaluation of Meteorological Disasters, School of Atmospheric Physics, Nanjing University of Information Science and Technology, 210044 Nanjing, Jiangsu, China. Email: 000420@nuist.edu.cn
Abstract: In order to study the problem of damage that caused by lightning overvoltage to the transistor, we designed the experiments of combined wave impact on the transistor under different conditions by analyzing the theory of the secondary breakdown of the transistor caused by the lightning electromagnetic pulse. These cases are carried out under the condition of no protection, transient protection diode (TVS) parallel protection, and TVS tube parallel protection in the actual base amplifier circuit. It is concluded that transistor can cause it to further deteriorate under the condition of lightning overvoltage impact, and the situation of the damage can be divided into two categories, transient suppression diode in parallel with a transistor that is struck by a lightning voltage can effectively protect the transistor, which can obviously improve the resistance of the transistor. In practical amplifying circuit, applied voltage reduces the tolerance level of transistors, however, the tolerance level of transistors with transient suppression diodes in parallel is still better than the tolerance level without protection, which confirmed the conjecture that transient suppression diodes can be applied to actual circuits to protect transistors in parallel. In this paper, the theoretical analysis and experimental research on the damage of the lightning voltage on the transistor, the tolerance level of the transistor to the lightning voltage and the protection effect of the TVS tube on the transistor are carried out, which has certain reference value in the actual lightning protection of the transistor.
