Affiliations: [a] School of Electronic Engineering, University of
Electronic Science and Technology of China, Chengdu, China
Correspondence:
[*]
Corresponding author: Fuqun Zhong, School of Electronic
Engineering, University of Electronic Science and Technology of China, Chengdu,
611731, China. E-mail: zhongfuqun@gmail.com
Abstract: Accompany with the rapid development of millimeter-wave science and
technology, sub-harmonically pumped mixers have received more and more
attention. One important issue of the mixer is its parasitic parameters of the
diode structure play an important role in the conversion loss. Therefore, the
influence of parasitic parameter on the performance of the mixer is studied by
extraction of parasitic parameter of antiparallel GaAs Schottky diode in this
research. Based on the research, a mixer working in the 91–98 GHz band is
designed and fabricated based on rogers substrate process. The single side band
(SSB) conversion loss is about 8 ∼ 11 dB when pumped with 6mW of local
oscillator power and minimum SSB conversion loss of 8 dB is measured at 93 GHz.
The measured performance of the proposed mixer is sufficient and robust for the
foreseen applications.
