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Issue title: Selected Papers from the 14th International Symposium on Applied Electromagnetics and Mechanics (ISEM 2009), Part I
Article type: Research Article
Authors: Tanaka, Roberto Yujia | Passaro, Angeloa; * | Abe, Nancy Miekoa | Vieira, Gustavo Soaresa | Stephany, Stephanb
Affiliations: [a] Applied Physics Division, Institute for Advanced Studies, São José dos Campos, SP, Brazil | [b] Laboratory for Computing and Applied Mathematics, National Institute for Space Research, LAC/INPE, São José dos Campos, SP, Brazil
Correspondence: [*] Corresponding author: Angelo Passaro, IEAv, Rodovia dos Tamoios, km 5,5, São José dos Campos, SP, Brazil, CEP 12228-001. Tel.: +55 12 3947 5563; Fax: +55 12 3944 1177; E-mail: angelo@ieav.cta.br
Abstract: Self-consistent calculations of multi-quantum well semiconductor structures based on a Finite-Element Method are presented. The self-consistent calculation is specially needed when wells of different width are present in the structure, generating a larger charge separation and affecting significantly the tunneling conditions. The object-oriented computer code used was implemented using a finite-element class library developed and used in previous works. Results for an asymmetric heterostructure with a larger well and contact layers are also presented.
Keywords: Quantum well, finite element methods, nanotechnology, self-consistency
DOI: 10.3233/JAE-2010-1116
Journal: International Journal of Applied Electromagnetics and Mechanics, vol. 33, no. 1-2, pp. 217-223, 2010
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