Stress around crack tip induced by electromagnetic force in DSCu/SS316 HIP bonded structure

Issue title: Proceedings of the tenth International Symposium on Applied Electromagnetics and Mechanics ISEM-Tokyo

Article type: Research Article

Authors: Kohno, H.^a | Watanabe, K.^a | Nomura, Y.^a | Saito, M.^{b; *}

Affiliations: [a] Institute of Engineering Mechanics, University of Tsukuba | [b] Institute of Engineering Mechanics, University of Tsukuba 1-1-1 Tennoudai, Tsukuba, Ibarake 305-8573, Japan

Correspondence: [*] Corresponding author: M. Saito, Tel.: +81 298 53 5286; Fax: +81 298 53 5286; E-mail: saito@riko.tsukuba.ac.jp

Abstract: The component of ITER facing directly to plasma is called the first wall. The first wall is composed of DSCu/SS316 HIP bonded structure. In addition to residual stress due to the HIP bonding process the electromagnetic force is loaded on the first wall during plasma disruption. In this study, we assume an initial crack in the first wall. Stress induced by the electromagnetic force at the crack tip is estimated by finite element method taking the residual stress into consideration. From a viewpoint of fracture mechanics, stress intensity factor K is evaluated to make sure the structural integrity of the DSCu/SS316 HIP bonded structure. As a result of analyses, the stress intensity factor K is not so large for all of the assumed cracks. Therefore, there is no possibility of fracture due to the crack growth during the lifetime of the first wall.

DOI: 10.3233/JAE-2002-469

Journal: International Journal of Applied Electromagnetics and Mechanics, vol. 15, no. 1-4, pp. 331-336, 2002