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Issue title: Proceedings of the tenth International Symposium on Applied Electromagnetics and Mechanics ISEM-Tokyo
Article type: Research Article
Authors: Gavrichkov, V.A.a | Kuz'min, E.V.b | Ovchinnikov, S.G.c; * | Mamalis, A.G.c
Affiliations: [a] L.V. Kirensky Institute of Physics, Krasnoyarsk, 660036, Russia | [b] Krasnoyarsk State University, Krasnoyarsk, 660062, Russia | [c] National Technical University of Athens, Athens, 10682, Greece
Correspondence: [*] Corresponding author: S.G. Ovchinnikov, Fax: +7 3912 438923; E-mail: sgo@iph.krasn.ru
Abstract: Generalized tight-binding method is developed to strongly correlated electron systems. Evolution of the band structure of CuO_2 layer with hole doping from the undoped charge transfer antiferromagnetic insulator to the optimally doped paramagnetic metal is obtained. Effective low energy Hamiltonian is given by a t-J-I model that allows to compare magnetic mechanism and symmetry of pairing in cuprates and ruthenates on equal footing.
DOI: 10.3233/JAE-2002-342
Journal: International Journal of Applied Electromagnetics and Mechanics, vol. 13, no. 1-4, pp. 343-348, 2002
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