Affiliations: Mathématiques pour l'Industrie et La Physique, UMR CNRS 9974, UFR MIG, Université Paul Sabatier, 118, route de Narbonne, F-31062 Toulouse Cedex, France | LA CNRS 168, Laboratoire l.A. Dieudonné, Université de Nice Sophia-Antipolis, Parc Valrose, BP 71, F-06J08 Nice Cedex 02, France | Institut für Angewandte Mathematik, Technische Universität, Wiedner Hptstr. 6-10, A-I 040 Vienna, Austria
Note: [] This work has been supported by the “Human Capital and Mobility” project # ERBCHRXCT 930413, entitled “Nonlinear spatio-temporal structures in semiconductors, fluids and oscillator ensembles”, funded by the EC and by the Thomson CSF company under contract # B522.059.024.
Abstract: The aim of this work is to extend the mathematical model of a Schottky diode proposed in [5]. This model relies on an asymptotic analysis of the Vlasov–Poisson system. In [5], a one-dimensional model was derived. In the present paper, a three-dimensional model is investigated.
