Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate

Article type: Research Article

Authors: Wu, Hao^; | Jiang, Jie

Affiliations: School of Mathematical Sciences and Shanghai Key Laboratory for Contemporary Applied Mathematics, Fudan University, Shanghai, China. E-mail: haowufd@yahoo.com | Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan, China. E-mail: jiangbryan@gmail.com

Note: [] Corresponding author: Hao Wu, School of Mathematical Sciences and Shanghai Key Laboratory for Contemporary Applied Mathematics, Fudan University, Shanghai 200433, China. E-mail: haowufd@yahoo.com

Abstract: In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity.

Keywords: drift-diffusion-Poisson system, global weak solution, uniqueness, long-time behavior

DOI: 10.3233/ASY-131176

Journal: Asymptotic Analysis, vol. 85, no. 1-2, pp. 75-105, 2013